2N6762
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Microsemi Corporation 2N6762

Manufacturer No:
2N6762
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
2N6762 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 4.5A TO204AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.8Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):4W (Ta), 75W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-204AA
Package / Case:TO-204AA, TO-3
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Similar Products

Part Number 2N6762 2N6792   2N6764   2N6766   2N6768   2N6782   2N6760   2N6761  
Manufacturer Microsemi Corporation Harris Corporation Microsemi Corporation Microsemi Corporation Microsemi Corporation Microsemi Corporation Harris Corporation Harris Corporation
Product Status Obsolete Active Obsolete Obsolete Active Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 400 V 100 V 200 V 400 V 100 V 400 V 450 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) 2A (Tc) 38A (Tc) 30A (Tc) 14A (Tc) 3.5A (Tc) 5.5A (Tc) 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.8Ohm @ 4.5A, 10V 1.8Ohm @ 1.25A, 10V 65mOhm @ 38A, 10V 90mOhm @ 30A, 10V 400mOhm @ 14A, 10V 600mOhm @ 2.25A, 10V 1.22Ohm @ 5.5A, 10V 2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 1mA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V - 125 nC @ 10 V 115 nC @ 10 V 110 nC @ 10 V 8.1 nC @ 10 V 39 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - 600 pF @ 25 V - - - - - 800 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 4W (Ta), 75W (Tc) 20W (Tc) 4W (Ta), 150W (Tc) 4W (Ta), 150W (Tc) 4W (Ta), 150W (Tc) 800mW (Ta), 15W (Tc) 4W (Ta), 75W (Tc) 75W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-204AA TO-205AF (TO-39) TO-3 TO-3 TO-3 TO-39 TO-204AA TO-3
Package / Case TO-204AA, TO-3 TO-205AF Metal Can TO-204AE TO-204AE TO-204AE TO-205AF Metal Can TO-204AA, TO-3 TO-204AA, TO-3

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