2N6762
  • Share:

Microsemi Corporation 2N6762

Manufacturer No:
2N6762
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
2N6762 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 4.5A TO204AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.8Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):4W (Ta), 75W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-204AA
Package / Case:TO-204AA, TO-3
0 Remaining View Similar

In Stock

-
361

Please send RFQ , we will respond immediately.

Similar Products

Part Number 2N6762 2N6792   2N6764   2N6766   2N6768   2N6782   2N6760   2N6761  
Manufacturer Microsemi Corporation Harris Corporation Microsemi Corporation Microsemi Corporation Microsemi Corporation Microsemi Corporation Harris Corporation Harris Corporation
Product Status Obsolete Active Obsolete Obsolete Active Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 400 V 100 V 200 V 400 V 100 V 400 V 450 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) 2A (Tc) 38A (Tc) 30A (Tc) 14A (Tc) 3.5A (Tc) 5.5A (Tc) 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.8Ohm @ 4.5A, 10V 1.8Ohm @ 1.25A, 10V 65mOhm @ 38A, 10V 90mOhm @ 30A, 10V 400mOhm @ 14A, 10V 600mOhm @ 2.25A, 10V 1.22Ohm @ 5.5A, 10V 2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 1mA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V - 125 nC @ 10 V 115 nC @ 10 V 110 nC @ 10 V 8.1 nC @ 10 V 39 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - 600 pF @ 25 V - - - - - 800 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 4W (Ta), 75W (Tc) 20W (Tc) 4W (Ta), 150W (Tc) 4W (Ta), 150W (Tc) 4W (Ta), 150W (Tc) 800mW (Ta), 15W (Tc) 4W (Ta), 75W (Tc) 75W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-204AA TO-205AF (TO-39) TO-3 TO-3 TO-3 TO-39 TO-204AA TO-3
Package / Case TO-204AA, TO-3 TO-205AF Metal Can TO-204AE TO-204AE TO-204AE TO-205AF Metal Can TO-204AA, TO-3 TO-204AA, TO-3

Related Product By Categories

FCPF250N65S3R0L-F154
FCPF250N65S3R0L-F154
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
SQJA96EP-T1_GE3
SQJA96EP-T1_GE3
Vishay Siliconix
MOSFET N-CH 80V 30A PPAK SO-8
STL45N10F7AG
STL45N10F7AG
STMicroelectronics
MOSFET N-CH 100V 18A POWERFLAT
NTMFS011N15MC
NTMFS011N15MC
onsemi
MOSFET N-CH 150V 10.7A/78A 8PQFN
BSP297L6327HTSA1
BSP297L6327HTSA1
Infineon Technologies
MOSFET N-CH 200V 660MA SOT223-4
SI5406DC-T1-E3
SI5406DC-T1-E3
Vishay Siliconix
MOSFET N-CH 12V 6.9A 1206-8
IXFK30N50Q
IXFK30N50Q
IXYS
MOSFET N-CH 500V 30A TO264AA
AUIRF3805S
AUIRF3805S
Infineon Technologies
MOSFET N-CH 55V 160A D2PAK
NDF10N60ZH
NDF10N60ZH
onsemi
MOSFET N-CH 600V 10A TO220FP
NVD4815NT4G
NVD4815NT4G
onsemi
MOSFET N-CH 30V 6.9A/35A DPAK-3
SUP40N10-30-E3
SUP40N10-30-E3
Vishay Siliconix
MOSFET N-CH 100V 40A TO220AB
2SK3670(T6CANO,A,F
2SK3670(T6CANO,A,F
Toshiba Semiconductor and Storage
MOSFET N-CH TO92MOD

Related Product By Brand

MXLP5KE5.0CAE3
MXLP5KE5.0CAE3
Microsemi Corporation
TVS DIODE 5VWM 9.2VC DO204AL
APT15S20BCTG
APT15S20BCTG
Microsemi Corporation
DIODE ARRAY SCHOTTKY 200V TO247
FST153100A
FST153100A
Microsemi Corporation
DIODE MODULE 100V TO249
1N4762AP/TR8
1N4762AP/TR8
Microsemi Corporation
DIODE ZENER 82V 1W DO204AL
1N5916APE3/TR12
1N5916APE3/TR12
Microsemi Corporation
DIODE ZENER 4.3V 1.5W DO204AL
2EZ82D2E3/TR12
2EZ82D2E3/TR12
Microsemi Corporation
DIODE ZENER 82V 2W DO204AL
3EZ11D5E3/TR12
3EZ11D5E3/TR12
Microsemi Corporation
DIODE ZENER 11V 3W DO204AL
1N5954PE3/TR8
1N5954PE3/TR8
Microsemi Corporation
DIODE ZENER 160V 1.5W DO204AL
3EZ20D/TR8
3EZ20D/TR8
Microsemi Corporation
DIODE ZENER 20V 3W DO204AL
1N821A, SEL. 1% VBR
1N821A, SEL. 1% VBR
Microsemi Corporation
DIODE ZENER 6.2V 500MW DO35
APT5F100K
APT5F100K
Microsemi Corporation
MOSFET N-CH 1000V 5A TO220
LXMG1621-04
LXMG1621-04
Microsemi Corporation
MOD INVERTER CCFL DIM DUAL 5MA