Microsemi Corporation-2N5109 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	20V
Frequency - Transition:	1.2GHz
Noise Figure (dB Typ @ f):	-
Gain:	12dB
Power - Max:	2.5W
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 50mA, 15V
Current - Collector (Ic) (Max):	400mA
Operating Temperature:	-
Mounting Type:	Through Hole
Package / Case:	TO-205AD, TO-39-3 Metal Can
Supplier Device Package:	TO-39

Microsemi Corporation 2N5109