Microsemi Corporation-2N3960 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2N3960	2N3962
Manufacturer	Microsemi Corporation	onsemi
Product Status	Active	Obsolete
Transistor Type	NPN	PNP
Current - Collector (Ic) (Max)	-	200 mA
Voltage - Collector Emitter Breakdown (Max)	12 V	60 V
Vce Saturation (Max) @ Ib, Ic	300mV @ 3mA, 30mA	400mV @ 5mA, 50mA
Current - Collector Cutoff (Max)	10µA (ICBO)	10nA
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 10mA, 1V	100 @ 1mA, 5V
Power - Max	400 mW	360 mW
Frequency - Transition	-	-
Operating Temperature	-65°C ~ 200°C (TJ)	-
Mounting Type	Through Hole	Through Hole
Package / Case	TO-206AA, TO-18-3 Metal Can	TO-206AA, TO-18-3 Metal Can
Supplier Device Package	TO-18 (TO-206AA)	TO-18

Transistor Type:	NPN
Current - Collector (Ic) (Max):	-
Voltage - Collector Emitter Breakdown (Max):	12 V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 3mA, 30mA
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 10mA, 1V
Power - Max:	400 mW
Frequency - Transition:	-
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-206AA, TO-18-3 Metal Can
Supplier Device Package:	TO-18 (TO-206AA)

Microsemi Corporation 2N3960