Microsemi Corporation-2N2857UB - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	15V
Frequency - Transition:	-
Noise Figure (dB Typ @ f):	4.5dB @ 450MHz
Gain:	21dB
Power - Max:	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 3mA, 1V
Current - Collector (Ic) (Max):	40mA
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	3-SMD, No Lead
Supplier Device Package:	UB

Microsemi Corporation 2N2857UB