1N6629US
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Microsemi Corporation 1N6629US

Manufacturer No:
1N6629US
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
1N6629US Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 880V 1.4A A-MELF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):880 V
Current - Average Rectified (Io):1.4A
Voltage - Forward (Vf) (Max) @ If:1.4 V @ 1.4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:2 µA @ 880 V
Capacitance @ Vr, F:40pF @ 10V, 1MHz
Mounting Type:Surface Mount
Package / Case:SQ-MELF, A
Supplier Device Package:A-MELF
Operating Temperature - Junction:-65°C ~ 150°C
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Similar Products

Part Number 1N6629US 1N6620US   1N6621US   1N6622US   1N6623US   1N6624US   1N6625US   1N6626US   1N6627US   1N6628US  
Manufacturer Microsemi Corporation Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Discontinued at Digi-Key Active Active Active Active Discontinued at Digi-Key Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 880 V 220 V 440 V 660 V 880 V 990 V 1100 V 220 V 440 V 660 V
Current - Average Rectified (Io) 1.4A 1.2A 1.2A 1.2A 1A 1A 1A 1.75A 1.75A 1.75A
Voltage - Forward (Vf) (Max) @ If 1.4 V @ 1.4 A 1.4 V @ 1.2 A 1.4 V @ 1.2 A 1.4 V @ 1.2 A 1.55 V @ 1 A 1.55 V @ 1 A 1.75 V @ 1 A 1.35 V @ 2 A 1.35 V @ 2 A 1.35 V @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 30 ns 30 ns 30 ns 50 ns 50 ns 60 ns 30 ns 30 ns 30 ns
Current - Reverse Leakage @ Vr 2 µA @ 880 V 500 nA @ 220 V 500 nA @ 440 V 500 nA @ 660 V 500 nA @ 880 V 500 nA @ 990 V 1 µA @ 1100 V 2 µA @ 220 V 2 µA @ 440 V 2 µA @ 660 V
Capacitance @ Vr, F 40pF @ 10V, 1MHz 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz 40pF @ 10V, 1MHz 40pF @ 10V, 1MHz 40pF @ 10V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A
Supplier Device Package A-MELF A-MELF A-MELF A-MELF A-MELF A-MELF A-MELF A-MELF A-MELF A-MELF
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

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