1N6629
  • Share:

Microsemi Corporation 1N6629

Manufacturer No:
1N6629
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
1N6629 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 880V 1.4A AXIAL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):880 V
Current - Average Rectified (Io):1.4A
Voltage - Forward (Vf) (Max) @ If:1.4 V @ 1.4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:2 µA @ 880 V
Capacitance @ Vr, F:40pF @ 10V, 1MHz
Mounting Type:Through Hole
Package / Case:A, Axial
Supplier Device Package:- 
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

-
20

Please send RFQ , we will respond immediately.

Similar Products

Part Number 1N6629 1N6639   1N6620   1N6621   1N6622   1N6623   1N6625   1N6626   1N6627   1N6628  
Manufacturer Microsemi Corporation Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 880 V 75 V 220 V 440 V 600 V 880 V 1100 V 220 V 440 V 600 V
Current - Average Rectified (Io) 1.4A 300mA 1.2A 1.2A 1.2A 1A 1A 1.75A 1.75A 1.75A
Voltage - Forward (Vf) (Max) @ If 1.4 V @ 1.4 A 1.2 V @ 500 mA 1.4 V @ 1.2 A 1.4 V @ 1.2 A 1.4 V @ 1.2 A 1.55 V @ 1 A 1.75 V @ 1 A 1.35 V @ 2 A 1.35 V @ 2 A 1.35 V @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 4 ns 30 ns 30 ns 45 ns 50 ns 60 ns 30 ns 30 ns 45 ns
Current - Reverse Leakage @ Vr 2 µA @ 880 V - 500 nA @ 220 V 500 nA @ 440 V 500 nA @ 600 V 500 nA @ 880 V 1 µA @ 1100 V 2 µA @ 220 V 2 µA @ 440 V 2 µA @ 600 V
Capacitance @ Vr, F 40pF @ 10V, 1MHz - 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz - 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz 40pF @ 10V, 1MHz 40pF @ 10V, 1MHz -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case A, Axial DO-204AH, DO-35, Axial A, Axial A, Axial A, Axial A, Axial A, Axial A, Axial A, Axial A, Axial
Supplier Device Package - DO-35 (DO-204AH) - - A-PAK - - - - A-PAK
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 175°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

SX1H15_R1_00001
SX1H15_R1_00001
Panjit International Inc.
ULTRA LOW IR SCHOTTKY BARRIER RE
RHRG30100
RHRG30100
Harris Corporation
30A, 1000V HYPERFAST DIODE
RGF1B
RGF1B
Fairchild Semiconductor
RECTIFIER DIODE, 1A, 100V, DO-21
SB1H100-E3/54
SB1H100-E3/54
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 1A DO204AL
VSSB410S-E3/5BT
VSSB410S-E3/5BT
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 1.9A DO214AA
S1MB-13
S1MB-13
Diodes Incorporated
DIODE GEN PURP 1KV 1A SMB
B340A-13
B340A-13
Diodes Incorporated
DIODE SCHOTTKY 40V 3A SMA
1N3612GP-E3/73
1N3612GP-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
MBR5100MFST3G
MBR5100MFST3G
onsemi
DIODE SCHOTTKY 100V 5A 5DFN
SS13LHRHG
SS13LHRHG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A SUB SMA
SS25LHM2G
SS25LHM2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 2A SUB SMA
RB168MM100TR
RB168MM100TR
Rohm Semiconductor
DIODE SCHOTTKY 100V 1A SOD123FL

Related Product By Brand

SM1603C
SM1603C
Microsemi Corporation
TVS DIODE 3.3VWM 9VC 16SO
SMCJ6060E3/TR13
SMCJ6060E3/TR13
Microsemi Corporation
TVS DIODE 60VWM 108VC DO214AB
MXP5KE130AE3
MXP5KE130AE3
Microsemi Corporation
TVS DIODE 130VWM 209VC DO204AL
MP5KE7.5A
MP5KE7.5A
Microsemi Corporation
TVS DIODE 7.5VWM 12.9VC DO204AL
APT10SCD65K
APT10SCD65K
Microsemi Corporation
DIODE SILICON 650V 17A TO220
JANTX1N4981CUS
JANTX1N4981CUS
Microsemi Corporation
DIODE ZENER 91V 5W D5B
2EZ39D10E3/TR12
2EZ39D10E3/TR12
Microsemi Corporation
DIODE ZENER 39V 2W DO204AL
1EZ170D2/TR8
1EZ170D2/TR8
Microsemi Corporation
DIODE ZENER 170V 1W DO204AL
1N5915P/TR8
1N5915P/TR8
Microsemi Corporation
DIODE ZENER 3.9V 1.5W DO204AL
2N6762
2N6762
Microsemi Corporation
MOSFET N-CH 500V 4.5A TO204AA
A1020B-2VQG80C
A1020B-2VQG80C
Microsemi Corporation
IC FPGA 69 I/O 80VQFP
LX1552CPW
LX1552CPW
Microsemi Corporation
IC OFFLINE SW MULT TOP 20TSSOP