1N6629
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Microsemi Corporation 1N6629

Manufacturer No:
1N6629
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
1N6629 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 880V 1.4A AXIAL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):880 V
Current - Average Rectified (Io):1.4A
Voltage - Forward (Vf) (Max) @ If:1.4 V @ 1.4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:2 µA @ 880 V
Capacitance @ Vr, F:40pF @ 10V, 1MHz
Mounting Type:Through Hole
Package / Case:A, Axial
Supplier Device Package:- 
Operating Temperature - Junction:-65°C ~ 150°C
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Similar Products

Part Number 1N6629 1N6639   1N6620   1N6621   1N6622   1N6623   1N6625   1N6626   1N6627   1N6628  
Manufacturer Microsemi Corporation Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 880 V 75 V 220 V 440 V 600 V 880 V 1100 V 220 V 440 V 600 V
Current - Average Rectified (Io) 1.4A 300mA 1.2A 1.2A 1.2A 1A 1A 1.75A 1.75A 1.75A
Voltage - Forward (Vf) (Max) @ If 1.4 V @ 1.4 A 1.2 V @ 500 mA 1.4 V @ 1.2 A 1.4 V @ 1.2 A 1.4 V @ 1.2 A 1.55 V @ 1 A 1.75 V @ 1 A 1.35 V @ 2 A 1.35 V @ 2 A 1.35 V @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 4 ns 30 ns 30 ns 45 ns 50 ns 60 ns 30 ns 30 ns 45 ns
Current - Reverse Leakage @ Vr 2 µA @ 880 V - 500 nA @ 220 V 500 nA @ 440 V 500 nA @ 600 V 500 nA @ 880 V 1 µA @ 1100 V 2 µA @ 220 V 2 µA @ 440 V 2 µA @ 600 V
Capacitance @ Vr, F 40pF @ 10V, 1MHz - 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz - 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz 40pF @ 10V, 1MHz 40pF @ 10V, 1MHz -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case A, Axial DO-204AH, DO-35, Axial A, Axial A, Axial A, Axial A, Axial A, Axial A, Axial A, Axial A, Axial
Supplier Device Package - DO-35 (DO-204AH) - - A-PAK - - - - A-PAK
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 175°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

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