1N5811/TR
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Microsemi Corporation 1N5811/TR

Manufacturer No:
1N5811/TR
Manufacturer:
Microsemi Corporation
Package:
Tape & Reel (TR)
Datasheet:
1N5811/TR Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 150V 6A AXIAL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):150 V
Current - Average Rectified (Io):6A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:5 µA @ 150 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:B, Axial
Supplier Device Package:- 
Operating Temperature - Junction:-65°C ~ 175°C
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$6.90
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Similar Products

Part Number 1N5811/TR 1N5711/TR  
Manufacturer Microsemi Corporation Microchip Technology
Product Status Active Active
Diode Type Standard Schottky
Voltage - DC Reverse (Vr) (Max) 150 V 70 V
Current - Average Rectified (Io) 6A 33mA
Voltage - Forward (Vf) (Max) @ If 875 mV @ 4 A 1 V @ 15 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 30 ns -
Current - Reverse Leakage @ Vr 5 µA @ 150 V 200 nA @ 50 V
Capacitance @ Vr, F - 2pF @ 0V, 1MHz
Mounting Type Through Hole Through Hole
Package / Case B, Axial DO-204AH, DO-35, Axial
Supplier Device Package - DO-35 (DO-204AH)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 150°C

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