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| Part Number | 1N5806/TR | 1N5807/TR | 1N5802/TR | 1N5803/TR | 1N5804/TR | 1N5805/TR |
|---|---|---|---|---|---|---|
| Manufacturer | Microsemi Corporation | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology |
| Product Status | Active | Active | Active | Active | Active | Active |
| Diode Type | Standard | Standard | Standard | Standard | Standard | Standard |
| Voltage - DC Reverse (Vr) (Max) | 150 V | 50 V | 50 V | 75 V | 100 V | 125 V |
| Current - Average Rectified (Io) | 2.5A | 3A | 1A | 1A | 1A | 1A |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 1 A | 875 mV @ 4 A | 875 mV @ 1 A | 875 mV @ 1 A | 875 mV @ 1 A | 875 mV @ 1 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns | 30 ns | 25 ns | 25 ns | 25 ns | 25 ns |
| Current - Reverse Leakage @ Vr | 1 µA @ 150 V | 5 µA @ 50 V | 1 µA @ 50 V | 1 µA @ 75 V | 1 µA @ 100 V | 1 µA @ 125 V |
| Capacitance @ Vr, F | - | 60pF @ 10V, 1MHz | 25pF @ 10V, 1MHz | 25pF @ 10V, 1MHz | 25pF @ 10V, 1MHz | 25pF @ 10V, 1MHz |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Package / Case | A, Axial | B, Axial | A, Axial | A, Axial | A, Axial | A, Axial |
| Supplier Device Package | A-PAK | - | - | - | - | - |
| Operating Temperature - Junction | -65°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 125°C |
