MT53E512M64D2NZ-46 WT:B
  • Share:

Micron Technology Inc. MT53E512M64D2NZ-46 WT:B

Manufacturer No:
MT53E512M64D2NZ-46 WT:B
Manufacturer:
Micron Technology Inc.
Package:
Bulk
Datasheet:
MT53E512M64D2NZ-46 WT:B Datasheet
ECAD Model:
-
Description:
IC DRAM LPDDR4 32G 512MX64 FBGA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Memory Type:Volatile
Memory Format:DRAM
Technology:SDRAM - Mobile LPDDR4
Memory Size:32Gb (512M x 64)
Memory Interface:Parallel
Clock Frequency:2.133 GHz
Write Cycle Time - Word, Page:18ns
Access Time:3.5 ns
Voltage - Supply:1.06V ~ 1.17V
Operating Temperature:-25°C ~ 85°C (TC)
Mounting Type:Surface Mount
Package / Case:376-WFBGA
Supplier Device Package:376-WFBGA (14x14)
0 Remaining View Similar

In Stock

$37.77
4

Please send RFQ , we will respond immediately.

Related Product By Categories

R1LV5256ESA-5SI#S1
R1LV5256ESA-5SI#S1
Renesas Electronics America Inc
IC SRAM 256KBIT PARALLEL 28TSOP
47C16T-E/ST
47C16T-E/ST
Microchip Technology
IC EERAM 16KBIT I2C 1MHZ 8TSSOP
24LC512T-E/ST
24LC512T-E/ST
Microchip Technology
IC EEPROM 512KBIT I2C 8TSSOP
W29N01HVBINF TR
W29N01HVBINF TR
Winbond Electronics
1G-BIT NAND FLASH, 3V, 4-BIT ECC
W29N01HZBINA TR
W29N01HZBINA TR
Winbond Electronics
1G-BIT NAND FLASH, 1.8V, 1-BIT E
AT27C512R-70PC
AT27C512R-70PC
Microchip Technology
IC EPROM 512KBIT PARALLEL 28DIP
IDT71V3559SA75BQG
IDT71V3559SA75BQG
Renesas Electronics America Inc
IC SRAM 4.5MBIT PAR 165CABGA
CAT28F010GI-90T
CAT28F010GI-90T
onsemi
IC FLASH 1MBIT PARALLEL 32PLCC
MT29F4G08ABBEAH4-IT:E TR
MT29F4G08ABBEAH4-IT:E TR
Micron Technology Inc.
IC FLASH 4GBIT PARALLEL 63VFBGA
CY7C1387D-167BZI
CY7C1387D-167BZI
Infineon Technologies
IC SRAM 18MBIT PARALLEL 165FBGA
S25FL164K0XMFA001
S25FL164K0XMFA001
Infineon Technologies
IC FLASH 64MBIT SPI/QUAD 16SOIC
CY7C1366A-200AJC
CY7C1366A-200AJC
Rochester Electronics, LLC
CACHE SRAM, 256KX36, 3NS

Related Product By Brand

MT29C4G48MAZBBAKB-48 IT TR
MT29C4G48MAZBBAKB-48 IT TR
Micron Technology Inc.
IC FLASH RAM 4GBIT PAR 168WFBGA
MT25QU128ABA1ESE-0SIT TR
MT25QU128ABA1ESE-0SIT TR
Micron Technology Inc.
IC FLASH 128MBIT SPI 133MHZ 8SO
MT25QU512ABB8ESF-0AAT TR
MT25QU512ABB8ESF-0AAT TR
Micron Technology Inc.
IC FLASH 512MBIT SPI 133MHZ 16SO
MT29F16G08ABABAWP-AIT:B TR
MT29F16G08ABABAWP-AIT:B TR
Micron Technology Inc.
IC FLSH 16GBIT PARALLEL 48TSOP I
MT44K16M36RB-107E:B TR
MT44K16M36RB-107E:B TR
Micron Technology Inc.
IC DRAM 576MBIT PARALLEL 168BGA
MT48LC8M16LFF4-75M IT:G
MT48LC8M16LFF4-75M IT:G
Micron Technology Inc.
IC DRAM 128MBIT PARALLEL 54VFBGA
RC28F128J3F95D
RC28F128J3F95D
Micron Technology Inc.
IC FLASH 128MBIT PAR 64EASYBGA
JS28F640P33TF70A
JS28F640P33TF70A
Micron Technology Inc.
IC FLASH 64MBIT PARALLEL 56TSOP
MT29F256G08EFCDBWP-10M:D TR
MT29F256G08EFCDBWP-10M:D TR
Micron Technology Inc.
IC FLASH 256GBIT PAR 48TSOP I
MT53B384M32D2DS-062 AIT:B TR
MT53B384M32D2DS-062 AIT:B TR
Micron Technology Inc.
IC DRAM 12GBIT 1600MHZ 200WFBGA
MT29F2G08ABAEAWP-E:E
MT29F2G08ABAEAWP-E:E
Micron Technology Inc.
IC FLASH 2GBIT PARALLEL 48TSOP I
MT16HTF25664AY-667A3
MT16HTF25664AY-667A3
Micron Technology Inc.
MODULE DDR2 SDRAM 2GB 240UDIMM