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| Part Number | VP2206N3-G | VP2106N3-G |
|---|---|---|
| Manufacturer | Microchip Technology | Microchip Technology |
| Product Status | Active | Active |
| FET Type | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 640mA (Tj) | 250mA (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V | 5V, 10V |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 3.5A, 10V | 12Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 10mA | 3.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - | - |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 25 V | 60 pF @ 25 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 740mW (Tc) | 1W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | TO-92-3 | TO-92-3 |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) | TO-226-3, TO-92-3 (TO-226AA) |
