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| Part Number | VP2110K1-G | VN2110K1-G |
|---|---|---|
| Manufacturer | Microchip Technology | Microchip Technology |
| Product Status | Active | Active |
| FET Type | P-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 120mA (Tj) | 200mA (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V | 5V, 10V |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 500mA, 10V | 4Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA | 2.4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - | - |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 25 V | 50 pF @ 25 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 360mW (Ta) | 360mW (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | TO-236AB (SOT23) | SOT-23-3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
