VP0808L-G
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Microchip Technology VP0808L-G

Manufacturer No:
VP0808L-G
Manufacturer:
Microchip Technology
Package:
Bag
Datasheet:
VP0808L-G Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 80V 280MA TO92-3
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:280mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:150 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-92-3
Package / Case:TO-226-3, TO-92-3 (TO-226AA)
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Similar Products

Part Number VP0808L-G VN0808L-G  
Manufacturer Microchip Technology Microchip Technology
Product Status Active Active
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 280mA (Tj) 300mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 1A, 10V 4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 25 V 50 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1W (Tc) 1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-92-3 TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 (TO-226AA)

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