VN10KN3-G-P014
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Microchip Technology VN10KN3-G-P014

Manufacturer No:
VN10KN3-G-P014
Manufacturer:
Microchip Technology
Package:
Tape & Box (TB)
Datasheet:
VN10KN3-G-P014 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 310MA TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:310mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-92-3
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
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$0.55
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Similar Products

Part Number VN10KN3-G-P014 VN10KN3-G-P013  
Manufacturer Microchip Technology Microchip Technology
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 310mA (Tj) 310mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V 60 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1W (Tc) 1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-92-3 TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads

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