UPS560E3/TR13
  • Share:

Microchip Technology UPS560E3/TR13

Manufacturer No:
UPS560E3/TR13
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Datasheet:
UPS560E3/TR13 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 60V 5A POWERMITE3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):60 V
Current - Average Rectified (Io):5A
Voltage - Forward (Vf) (Max) @ If:690 mV @ 5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:200 µA @ 60 V
Capacitance @ Vr, F:150pF @ 4V, 1MHz
Mounting Type:Surface Mount
Package / Case:Powermite®3
Supplier Device Package:Powermite 3
Operating Temperature - Junction:-55°C ~ 125°C
0 Remaining View Similar

In Stock

$0.59
106

Please send RFQ , we will respond immediately.

Similar Products

Part Number UPS560E3/TR13 UPS760E3/TR13   UPS160E3/TR13   UPS360E3/TR13   UPS540E3/TR13  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 60 V 60 V 60 V 60 V 40 V
Current - Average Rectified (Io) 5A 7A 1A 3A 5A
Voltage - Forward (Vf) (Max) @ If 690 mV @ 5 A 600 mV @ 7 A 600 mV @ 1 A 630 mV @ 3.5 A 540 mV @ 5 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 200 µA @ 60 V 100 µA @ 60 V 100 µA @ 60 V 200 µA @ 60 V 500 µA @ 40 V
Capacitance @ Vr, F 150pF @ 4V, 1MHz 375pF @ 4V, 1MHz 55pF @ 4V, 1MHz 130pF @ 4V, 1MHz 250pF @ 4V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case Powermite®3 Powermite®3 DO-216AA Powermite®3 Powermite®3
Supplier Device Package Powermite 3 Powermite 3 Powermite Powermite 3 Powermite 3
Operating Temperature - Junction -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C

Related Product By Categories

S1K-13-F
S1K-13-F
Diodes Incorporated
DIODE GEN PURP 800V 1A SMA
US1G_R1_00001
US1G_R1_00001
Panjit International Inc.
SMA, ULTRA
RB751V-40-AU_R1_000A1
RB751V-40-AU_R1_000A1
Panjit International Inc.
SOD-323, SKY
STPS120M
STPS120M
STMicroelectronics
DIODE SCHOTTKY 20V 1A STMITE
BYW85-TAP
BYW85-TAP
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 800V 3A SOD64
BYP25A05
BYP25A05
Diotec Semiconductor
ST Rect, 50V, 25A
GAS06520P
GAS06520P
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 20A 2-PI
1N5402RL
1N5402RL
onsemi
DIODE GEN PURP 200V 3A DO201AD
1S923TR
1S923TR
onsemi
DIODE GEN PURP 200V 200MA DO35
RS1KL M2G
RS1KL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 800MA SUBSMA
JANKCA1N5292
JANKCA1N5292
Microchip Technology
CURRENT REGULATOR
FM4007
FM4007
Rectron USA
DIODE GP GLASS 2A 1000V SMA

Related Product By Brand

SMCJ6.5AE3/TR13
SMCJ6.5AE3/TR13
Microchip Technology
TVS DIODE 6.5VWM 11.2VC DO214AB
MXLSMCJ11A
MXLSMCJ11A
Microchip Technology
TVS DIODE 11VWM 18.2VC DO214AB
MXLSMCJLCE9.0AE3
MXLSMCJLCE9.0AE3
Microchip Technology
TVS DIODE 9VWM 15.4VC DO214AB
DSC1101AI2-100.0000
DSC1101AI2-100.0000
Microchip Technology
MEMS OSC XO 100.0000MHZ CMOS SMD
DSC400-1111Q0110KI1
DSC400-1111Q0110KI1
Microchip Technology
MEMS OSC XO 2.25V-3.6V 20SMD
PIC16C54T-RCE/SO
PIC16C54T-RCE/SO
Microchip Technology
IC MCU 8BIT 768B OTP 18SOIC
ATMEGA164P-20MQR
ATMEGA164P-20MQR
Microchip Technology
IC MCU 8BIT 16KB FLASH 44VQFN
ATTINY45-15ST
ATTINY45-15ST
Microchip Technology
IC MCU 8BIT 4KB FLASH 8SOIC
LAN83C185-JT
LAN83C185-JT
Microchip Technology
IC PHY 10/100 3.3V LP 64-TQFP
AT49BV4096A-15TC
AT49BV4096A-15TC
Microchip Technology
IC FLASH 4MBIT PARALLEL 48TSOP
AT29C040A-90TC
AT29C040A-90TC
Microchip Technology
IC FLASH 4MBIT PARALLEL 32TSOP
MIC5337-1.8YMT-TR
MIC5337-1.8YMT-TR
Microchip Technology
IC REG LINEAR 1.8V 300MA 4TMLF