Microchip Technology-TP5335K1-G-VAO - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	350 V
Current - Continuous Drain (Id) @ 25°C:	85mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	30Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:	2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	110 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	360mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-23-3
Package / Case:	TO-236-3, SC-59, SOT-23-3

Microchip Technology TP5335K1-G-VAO