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Part Number | TP0604N3-G | TP0606N3-G | TN0604N3-G |
---|---|---|---|
Manufacturer | Microchip Technology | Microchip Technology | Microchip Technology |
Product Status | Active | Active | Active |
FET Type | P-Channel | P-Channel | N-Channel |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40 V | 60 V | 40 V |
Current - Continuous Drain (Id) @ 25°C | 430mA (Tj) | 320mA (Tj) | 700mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V | 5V, 10V | 5V, 10V |
Rds On (Max) @ Id, Vgs | 2Ohm @ 1A, 10V | 3.5Ohm @ 750mA, 10V | 750mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 1mA | 2.4V @ 1mA | 1.6V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | - | - | - |
Vgs (Max) | ±20V | ±20V | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 20 V | 150 pF @ 25 V | 190 pF @ 20 V |
FET Feature | - | - | - |
Power Dissipation (Max) | 740mW (Ta) | 1W (Tc) | 740mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Through Hole | Through Hole |
Supplier Device Package | TO-92-3 | TO-92-3 | TO-92-3 |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) | TO-226-3, TO-92-3 (TO-226AA) | TO-226-3, TO-92-3 (TO-226AA) |