TN5335N8-G
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Microchip Technology TN5335N8-G

Manufacturer No:
TN5335N8-G
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Datasheet:
TN5335N8-G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 350V 230MA TO243AA
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):350 V
Current - Continuous Drain (Id) @ 25°C:230mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):3V, 10V
Rds On (Max) @ Id, Vgs:15Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:110 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-243AA (SOT-89)
Package / Case:TO-243AA
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Similar Products

Part Number TN5335N8-G TN5325N8-G  
Manufacturer Microchip Technology Microchip Technology
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 350 V 250 V
Current - Continuous Drain (Id) @ 25°C 230mA (Tj) 316mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 3V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 15Ohm @ 200mA, 10V 7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 110 pF @ 25 V 110 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.6W (Ta) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-243AA (SOT-89) TO-243AA (SOT-89)
Package / Case TO-243AA TO-243AA

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