TN2501N8-G
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Microchip Technology TN2501N8-G

Manufacturer No:
TN2501N8-G
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Datasheet:
TN2501N8-G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 18V 400MA TO243AA
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):18 V
Current - Continuous Drain (Id) @ 25°C:400mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):1.2V, 3V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 200mA, 3V
Vgs(th) (Max) @ Id:1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:110 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.6W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-243AA (SOT-89)
Package / Case:TO-243AA
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Similar Products

Part Number TN2501N8-G TN2504N8-G  
Manufacturer Microchip Technology Microchip Technology
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 18 V 40 V
Current - Continuous Drain (Id) @ 25°C 400mA (Tj) 890mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 3V 5V, 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 200mA, 3V 1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 1V @ 1mA 1.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 110 pF @ 15 V 125 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 1.6W (Tc) 1.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-243AA (SOT-89) TO-243AA (SOT-89)
Package / Case TO-243AA TO-243AA

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