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| Part Number | TN2106N3-G | TN0106N3-G |
|---|---|---|
| Manufacturer | Microchip Technology | Microchip Technology |
| Product Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Tj) | 350mA (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 500mA, 10V | 3Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA | 2V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | - | - |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V | 60 pF @ 25 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 740mW (Tc) | 1W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | TO-92-3 | TO-92-3 |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) | TO-226-3, TO-92-3 (TO-226AA) |
