TN0610N3-G
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Microchip Technology TN0610N3-G

Manufacturer No:
TN0610N3-G
Manufacturer:
Microchip Technology
Package:
Bag
Datasheet:
TN0610N3-G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 500MA TO92-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:500mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):3V, 10V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 750mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:150 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-92-3
Package / Case:TO-226-3, TO-92-3 (TO-226AA)
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$1.32
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Similar Products

Part Number TN0610N3-G TN0620N3-G   TN0110N3-G  
Manufacturer Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 200 V 100 V
Current - Continuous Drain (Id) @ 25°C 500mA (Tj) 250mA (Tj) 350mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 3V, 10V 5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 750mA, 10V 6Ohm @ 500mA, 10V 3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 1.6V @ 1mA 2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 25 V 150 pF @ 25 V 60 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 1W (Tc) 1W (Tc) 1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-92-3 TO-92-3 TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 (TO-226AA)

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