Microchip Technology-MSCSM170HM23CT3AG - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	4 N-Channel (Full Bridge)
FET Feature:	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):	1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C:	124A (Tc)
Rds On (Max) @ Id, Vgs:	22.5mOhm @ 60A, 20V
Vgs(th) (Max) @ Id:	3.2V @ 5mA
Gate Charge (Qg) (Max) @ Vgs:	356nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:	6600pF @ 1000V
Power - Max:	602W (Tc)
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	-

Microchip Technology MSCSM170HM23CT3AG