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MSCSM170DUM23T3AG
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Microchip Technology MSCSM170DUM23T3AG

Manufacturer No:
MSCSM170DUM23T3AG
Manufacturer:
Microchip Technology
Package:
Bulk
Datasheet:
MSCSM170DUM23T3AG Datasheet
ECAD Model:
-
Description:
PM-MOSFET-SIC-SP3F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual) Common Source
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C:124A (Tc)
Rds On (Max) @ Id, Vgs:22.5mOhm @ 60A, 20V
Vgs(th) (Max) @ Id:3.2V @ 5mA
Gate Charge (Qg) (Max) @ Vgs:356nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:6600pF @ 1000V
Power - Max:602W (Tc)
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:SP3F
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$199.19
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