Microchip Technology-MSCSM120HM31CT3AG - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	4 N-Channel
FET Feature:	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:	89A (Tc)
Rds On (Max) @ Id, Vgs:	31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id:	2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:	3020pF @ 1000V
Power - Max:	395W (Tc)
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	SP3F

Microchip Technology MSCSM120HM31CT3AG