Microchip Technology-MSCSM120DUM11T3AG - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual) Common Source
FET Feature:	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:	254A (Tc)
Rds On (Max) @ Id, Vgs:	10.4mOhm @ 120A, 20V
Vgs(th) (Max) @ Id:	2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs:	696nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:	9060pF @ 1000V
Power - Max:	1067W (Tc)
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	SP3F

Microchip Technology MSCSM120DUM11T3AG