Microchip Technology-MSCM20XM10T3XG - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	6 N-Channel (3-Phase Bridge)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	200V
Current - Continuous Drain (Id) @ 25°C:	108A (Tc)
Rds On (Max) @ Id, Vgs:	9.7mOhm @ 81A, 10V
Vgs(th) (Max) @ Id:	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	161nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	10.7nF @ 50V
Power - Max:	341W (Tc)
Operating Temperature:	-40°C ~ 125°C (TC)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	SP3X

Microchip Technology MSCM20XM10T3XG