Microchip Technology-MSCGLQ50DH120CTBL2NG - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	-
Configuration:	Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	110 A
Power - Max:	375 W
Vce(on) (Max) @ Vge, Ic:	2.4V @ 15V, 50A
Current - Collector Cutoff (Max):	25 µA
Input Capacitance (Cies) @ Vce:	2.77 nF @ 25 V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	-

Microchip Technology MSCGLQ50DH120CTBL2NG