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| Part Number | MSC080SMA120B | MSC080SMA120S | MSC080SMA120B4 | MSC080SMA120J | MSC180SMA120B | MSC040SMA120B |
|---|---|---|---|---|---|---|
| Manufacturer | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology |
| Product Status | Active | Active | Active | Active | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | - | N-Channel |
| Technology | SiCFET (Silicon Carbide) | SiCFET (Silicon Carbide) | SiCFET (Silicon Carbide) | SiCFET (Silicon Carbide) | - | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V | 1200 V | 1200 V | 1200 V | - | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 37A (Tc) | 35A | 37A (Tc) | 37A (Tc) | - | 66A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V | 20V | 20V | - | - | 20V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 15A, 20V | 100mOhm @ 15A, 20V | 100mOhm @ 15A, 20V | - | - | 50mOhm @ 40A, 20V |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA | 2.8V @ 1mA | 2.8V @ 1mA | - | - | 2.7V @ 2mA |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 20 V | 64 nC @ 20 V | 64 nC @ 20 V | - | - | 137 nC @ 20 V |
| Vgs (Max) | +23V, -10V | +23V, -10V | +23V, -10V | - | - | +23V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 838 pF @ 1000 V | 838 pF @ 1000 V | 838 pF @ 1000 V | - | - | 1990 pF @ 1000 V |
| FET Feature | - | - | - | - | - | - |
| Power Dissipation (Max) | 200W (Tc) | 182W (Tc) | 200W (Tc) | - | - | 323W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | - | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Surface Mount | Through Hole | Chassis Mount | - | Through Hole |
| Supplier Device Package | TO-247-3 | D3PAK | TO-247-4 | SOT-227 (ISOTOP®) | - | TO-247-3 |
| Package / Case | TO-247-3 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-247-4 | SOT-227-4, miniBLOC | - | TO-247-3 |
