Microchip Technology-MNS2N3810UP/TR - Transistors - Bipolar (BJT) - Arrays Product Specifications and Latest Quotes

Transistor Type:	2 PNP (Dual)
Current - Collector (Ic) (Max):	50mA
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 100µA, 1mA
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	150 @ 1mA, 5V
Power - Max:	350mW
Frequency - Transition:	-
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-78-6 Metal Can
Supplier Device Package:	TO-78-6

Microchip Technology MNS2N3810UP/TR