LND250K1-G
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Microchip Technology LND250K1-G

Manufacturer No:
LND250K1-G
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Datasheet:
LND250K1-G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 13MA SOT23
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:13mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):0V
Rds On (Max) @ Id, Vgs:1000Ohm @ 500µA, 0V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:10 pF @ 25 V
FET Feature:Depletion Mode
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23 (TO-236AB)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number LND250K1-G LND150K1-G  
Manufacturer Microchip Technology Microchip Technology
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 13mA (Tj) 13mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 0V 0V
Rds On (Max) @ Id, Vgs 1000Ohm @ 500µA, 0V 1000Ohm @ 500µA, 0V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 10 pF @ 25 V 10 pF @ 25 V
FET Feature Depletion Mode Depletion Mode
Power Dissipation (Max) 360mW (Ta) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23 (TO-236AB) SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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