Microchip Technology-LND01K1-G - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	9 V
Current - Continuous Drain (Id) @ 25°C:	330mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):	0V
Rds On (Max) @ Id, Vgs:	1.4Ohm @ 100mA, 0V
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	+0.6V, -12V
Input Capacitance (Ciss) (Max) @ Vds:	46 pF @ 5 V
FET Feature:	Depletion Mode
Power Dissipation (Max):	360mW (Ta)
Operating Temperature:	-25°C ~ 125°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-23-5
Package / Case:	SC-74A, SOT-753

Microchip Technology LND01K1-G