JANTXV1N6630/TR
  • Share:

Microchip Technology JANTXV1N6630/TR

Manufacturer No:
JANTXV1N6630/TR
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Datasheet:
JANTXV1N6630/TR Datasheet
ECAD Model:
-
Description:
RECTIFIER UFR,FRR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):900 V
Current - Average Rectified (Io):1.4A
Voltage - Forward (Vf) (Max) @ If:1.4 V @ 1.4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:2 µA @ 900 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:E, Axial
Supplier Device Package:E-PAK
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$25.62
11

Please send RFQ , we will respond immediately.

Similar Products

Part Number JANTXV1N6630/TR JANTXV1N6638/TR   JANTXV1N6640/TR   JANTXV1N6631/TR   JANTXV1N6620/TR  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 900 V 125 V 50 V 1.1 V 220 V
Current - Average Rectified (Io) 1.4A 300mA 300mA 1.4A 1.2A
Voltage - Forward (Vf) (Max) @ If 1.4 V @ 1.4 A 1.1 V @ 200 mA 1 V @ 200 mA 1.6 V @ 1.4 A 1.4 V @ 1.2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 20 ns 4 ns 60 ns 30 ns
Current - Reverse Leakage @ Vr 2 µA @ 900 V 500 nA @ 125 V 100 nA @ 50 V 4 µA @ 1.1 V 500 nA @ 220 V
Capacitance @ Vr, F - 2.5pF @ 0V, 1MHz - 40pF @ 10V, 1MHz -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case E, Axial D, Axial DO-204AH, DO-35, Axial E, Axial A, Axial
Supplier Device Package E-PAK D-5D DO-35 (DO-204AH) E-PAK -
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

B2100AF-13
B2100AF-13
Diodes Incorporated
DIODE SCHOTTKY 100V 2A SMAFLAT
RKP300WKQE#H1
RKP300WKQE#H1
Renesas Electronics America Inc
RKP300WKQE PIN DIODE, 30V V(BR)
BY880-800
BY880-800
Diotec Semiconductor
DIODE STD D5.4X7.5 800V 8A
MURHD560W1T4G
MURHD560W1T4G
onsemi
DIODE GEN PURP 600V 5A DPAK
UG8DT-E3/45
UG8DT-E3/45
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
VS-8EWF12STRR-M3
VS-8EWF12STRR-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 8A D-PAK
FFSB10120A-F085
FFSB10120A-F085
onsemi
1200V 10A AUTO SIC SBD
SL1G-AQ-CT
SL1G-AQ-CT
Diotec Semiconductor
CUT-TAPE VERSION. STANDARD RECO
SD150R20PC
SD150R20PC
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 2KV 150A DO205
DLE30E
DLE30E
onsemi
DIODE GEN PURP 400V 3A AXIAL
MBRS260T3H
MBRS260T3H
onsemi
DIODE SCHOTTKY
BYWE29-50-E3/45
BYWE29-50-E3/45
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V TO220AC

Related Product By Brand

MSMBJ5.0CAE3
MSMBJ5.0CAE3
Microchip Technology
TVS DIODE 5VWM 9.2VC SMBJ
MXL5KP70CA
MXL5KP70CA
Microchip Technology
TVS DIODE 70VWM 113VC CASE 5A
DSC1001AE2-012.2880T
DSC1001AE2-012.2880T
Microchip Technology
MEMS OSC XO 12.2880MHZ CMOS SMD
VC-840-JAE-KAAN-126M488095TR
VC-840-JAE-KAAN-126M488095TR
Microchip Technology
OSCILLATOR CMOS SMD
DSC1200BL3-PROG
DSC1200BL3-PROG
Microchip Technology
DIFF MEMS OSC OTP SMD
APT15DQ120BHBG
APT15DQ120BHBG
Microchip Technology
FRED DQ 1200 V 15 A TO-247
1N3320A
1N3320A
Microchip Technology
DIODE ZENER 22V 50W DO5
PIC16LF1703-I/ML
PIC16LF1703-I/ML
Microchip Technology
IC MCU 8BIT 3.5KB FLASH 16QFN
ATF22LV10C-15SC
ATF22LV10C-15SC
Microchip Technology
IC PLD 10MC 15NS 24SOIC
AT49LV001T-90JI
AT49LV001T-90JI
Microchip Technology
IC FLASH 1MBIT PARALLEL 32PLCC
MIC2075-1BMM
MIC2075-1BMM
Microchip Technology
PWR DISTRIBUTION SWITCH
HCS515-I/SL
HCS515-I/SL
Microchip Technology
IC CODE HOPPING DECODER 14SOIC