JANTXV1N6622
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Microchip Technology JANTXV1N6622

Manufacturer No:
JANTXV1N6622
Manufacturer:
Microchip Technology
Package:
Bulk
Datasheet:
JANTXV1N6622 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 660V 1.2A AXIAL
Delivery:
Payment:
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iso9001
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Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):660 V
Current - Average Rectified (Io):1.2A
Voltage - Forward (Vf) (Max) @ If:1.4 V @ 1.2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:500 nA @ 660 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:A, Axial
Supplier Device Package:- 
Operating Temperature - Junction:-65°C ~ 150°C
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Similar Products

Part Number JANTXV1N6622 JANTXV1N6622U   JANTXV1N6628   JANTXV1N6662   JANTXV1N5622  
Manufacturer Microchip Technology Microsemi Corporation Microchip Technology Microchip Technology Microchip Technology
Product Status Discontinued at Digi-Key Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 660 V 600 V 660 V 400 V 1000 V
Current - Average Rectified (Io) 1.2A 1.2A 1.75A 500mA 1A
Voltage - Forward (Vf) (Max) @ If 1.4 V @ 1.2 A 1.4 V @ 1.2 A 1.35 V @ 2 A 1 V @ 400 mA 1.3 V @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 30 ns 30 ns - 2 µs
Current - Reverse Leakage @ Vr 500 nA @ 660 V 500 nA @ 600 V 2 µA @ 660 V 50 nA @ 400 V 500 nA @ 1000 V
Capacitance @ Vr, F - - 40pF @ 10V, 1MHz - -
Mounting Type Through Hole Surface Mount Through Hole Through Hole Through Hole
Package / Case A, Axial SQ-MELF, A E, Axial DO-204AH, DO-35, Axial A, Axial
Supplier Device Package - D-5A - DO-35 (DO-204AH) -
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 175°C -65°C ~ 200°C

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