JANTXV1N649-1/TR
  • Share:

Microchip Technology JANTXV1N649-1/TR

Manufacturer No:
JANTXV1N649-1/TR
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Datasheet:
JANTXV1N649-1/TR Datasheet
ECAD Model:
-
Description:
SIGNAL/COMPUTER DIODE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):400mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 400 mA
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:50 nA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
245

Please send RFQ , we will respond immediately.

Similar Products

Part Number JANTXV1N649-1/TR JANTXV1N645-1/TR   JANTXV1N647-1/TR  
Manufacturer Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 225 V 400 V
Current - Average Rectified (Io) 400mA 400mA (DC) 400mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 400 mA 1 V @ 400 mA 1 V @ 400 mA
Speed Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 50 nA @ 600 V 50 nA @ 225 V 50 nA @ 400 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial
Supplier Device Package DO-35 DO-35 DO-35
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

PMEG3010BEA,115
PMEG3010BEA,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1A SOD323
PMEG4002AESFCYL
PMEG4002AESFCYL
Nexperia USA Inc.
PMEG4002AESF - 40 V, 0.2 A LOW V
PMEG6002EB,115
PMEG6002EB,115
Nexperia USA Inc.
DIODE SCHOTTKY 60V 200MA SOD523
1N3613GP-E3/54
1N3613GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
VF30100SG-M3/4W
VF30100SG-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30A 100V ITO220AB
RS2GHE3/52T
RS2GHE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1.5A DO214AA
VS-50WQ04FNPBF
VS-50WQ04FNPBF
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 5.5A DPAK
SB340S-E3/54
SB340S-E3/54
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 3A DO204AC
MBR2150VRTR-E1
MBR2150VRTR-E1
Diodes Incorporated
DIODE SCHOTTKY 150V 2A DO214AC
SS12HM2G
SS12HM2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 1A DO214AC
RB068LAM-30TFTR
RB068LAM-30TFTR
Rohm Semiconductor
AUTOMOTIVE SCHOTTKY BARRIER DIOD
RBR5LAM30ATFTR
RBR5LAM30ATFTR
Rohm Semiconductor
AUTOMOTIVE SCHOTTKY BARRIER DIOD

Related Product By Brand

MSMCJ33AE3
MSMCJ33AE3
Microchip Technology
TVS DIODE 33VWM 53.3VC DO214AB
M1.5KE30AE3
M1.5KE30AE3
Microchip Technology
TVS DIODE 25.6VWM 41.4VC CASE-1
MX5KP36CA
MX5KP36CA
Microchip Technology
TVS DIODE 36VWM 58.1VC CASE 5A
DSC1001CI1-012.8000
DSC1001CI1-012.8000
Microchip Technology
OSC MEMS AUTO -40C-85C SMD
DSC-TIMEFLASH2-KIT2
DSC-TIMEFLASH2-KIT2
Microchip Technology
PROGRAMMING KIT WITH 2 SOCKET CA
JANTXV1N5541C-1
JANTXV1N5541C-1
Microchip Technology
DIODE ZENER 22V 500MW DO35
APT25GR120B
APT25GR120B
Microchip Technology
IGBT 1200V 75A 521W TO247
MAX3670ETJ2
MAX3670ETJ2
Microchip Technology
IC CLOCK GEN 155/622MHZ 32-TQFN
MCP795B21T-I/SL
MCP795B21T-I/SL
Microchip Technology
IC RTC CLK/CALENDAR SPI 14-SOIC
DSPIC33EV128GM004T-I/PT
DSPIC33EV128GM004T-I/PT
Microchip Technology
IC MCU 16BIT 128KB FLASH 44TQFP
PIC18LF26J50-I/ML
PIC18LF26J50-I/ML
Microchip Technology
IC MCU 8BIT 64KB FLASH 28QFN
AT90LS8535-4JI
AT90LS8535-4JI
Microchip Technology
IC MCU 8BIT 8KB FLASH 44PLCC