JANTXV1N5807/TR
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Microchip Technology JANTXV1N5807/TR

Manufacturer No:
JANTXV1N5807/TR
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Datasheet:
JANTXV1N5807/TR Datasheet
ECAD Model:
-
Description:
RECTIFIER UFR,FRR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:5 µA @ 50 V
Capacitance @ Vr, F:65pF @ 10V, 1MHz
Mounting Type:Through Hole
Package / Case:B, Axial
Supplier Device Package:- 
Operating Temperature - Junction:-65°C ~ 175°C
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In Stock

$14.49
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Similar Products

Part Number JANTXV1N5807/TR JANTXV1N5809/TR   JANTXV1N5802/TR   JANTXV1N5804/TR   JANTXV1N5806/TR  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 50 V 100 V 50 V 100 V 150 V
Current - Average Rectified (Io) 3A 3A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 875 mV @ 4 A 875 mV @ 4 A 875 mV @ 1 A 875 mV @ 1 A 875 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 30 ns 25 ns 25 ns 25 ns
Current - Reverse Leakage @ Vr 5 µA @ 50 V 5 µA @ 100 V 1 µA @ 50 V 1 µA @ 100 V 1 µA @ 150 V
Capacitance @ Vr, F 65pF @ 10V, 1MHz 65pF @ 10V, 1MHz 25pF @ 10V, 1MHz 25pF @ 10V, 1MHz 25pF @ 10V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case B, Axial B, Axial A, Axial A, Axial A, Axial
Supplier Device Package - - - - -
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

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