JANTXV1N5623
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Microchip Technology JANTXV1N5623

Manufacturer No:
JANTXV1N5623
Manufacturer:
Microchip Technology
Package:
Bulk
Datasheet:
JANTXV1N5623 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 1KV 1A AXIAL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.6 V @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):500 ns
Current - Reverse Leakage @ Vr:500 nA @ 1000 V
Capacitance @ Vr, F:15pF @ 12V, 1MHz
Mounting Type:Through Hole
Package / Case:A, Axial
Supplier Device Package:- 
Operating Temperature - Junction:-65°C ~ 175°C
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$12.18
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Similar Products

Part Number JANTXV1N5623 JANTXV1N5620   JANTXV1N5622  
Manufacturer Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 800 V 1000 V
Current - Average Rectified (Io) 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 3 A 1.3 V @ 3 A 1.3 V @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 500 ns 2 µs 2 µs
Current - Reverse Leakage @ Vr 500 nA @ 1000 V 500 nA @ 800 V 500 nA @ 1000 V
Capacitance @ Vr, F 15pF @ 12V, 1MHz - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case A, Axial A, Axial A, Axial
Supplier Device Package - - -
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 200°C -65°C ~ 200°C

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