Microchip Technology-JANTXV1N5614 - Diodes - Rectifiers - Single Product Specifications and Latest Quotes

Part Number	JANTXV1N5614	JANTXV1N5618	JANTXV1N5619	JANTXV1N5617	JANTXV1N5616
Manufacturer	Microchip Technology	Microchip Technology	Microchip Technology	Microchip Technology	Microchip Technology
Product Status	Active	Active	Active	Active	Active
Diode Type	Standard	Standard	Standard	Standard	Standard
Voltage - DC Reverse (Vr) (Max)	200 V	600 V	600 V	400 V	400 V
Current - Average Rectified (Io)	1A	1A	1A	1A	1A
Voltage - Forward (Vf) (Max) @ If	1.3 V @ 3 A	1.3 V @ 3 A	1.6 V @ 3 A	1.6 V @ 3 A	1.3 V @ 3 A
Speed	Standard Recovery >500ns, > 200mA (Io)	Standard Recovery >500ns, > 200mA (Io)	Fast Recovery =< 500ns, > 200mA (Io)	Fast Recovery =< 500ns, > 200mA (Io)	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)	2 µs	2 µs	250 ns	150 ns	2 µs
Current - Reverse Leakage @ Vr	500 nA @ 200 V	500 nA @ 600 V	500 nA @ 600 V	500 nA @ 400 V	500 nA @ 400 V
Capacitance @ Vr, F	-	-	25pF @ 12V, 1MHz	35pF @ 12V, 1MHz	-
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	A, Axial	A, Axial	A, Axial	A, Axial	A, Axial
Supplier Device Package	-	-	-	-	-
Operating Temperature - Junction	-65°C ~ 200°C	-65°C ~ 200°C	-65°C ~ 175°C	-65°C ~ 175°C	-65°C ~ 200°C

Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	200 V
Current - Average Rectified (Io):	1A
Voltage - Forward (Vf) (Max) @ If:	1.3 V @ 3 A
Speed:	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):	2 µs
Current - Reverse Leakage @ Vr:	500 nA @ 200 V
Capacitance @ Vr, F:	-
Mounting Type:	Through Hole
Package / Case:	A, Axial
Supplier Device Package:	-
Operating Temperature - Junction:	-65°C ~ 200°C

Microchip Technology JANTXV1N5614