JANTXV1N5419/TR
  • Share:

Microchip Technology JANTXV1N5419/TR

Manufacturer No:
JANTXV1N5419/TR
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Datasheet:
JANTXV1N5419/TR Datasheet
ECAD Model:
-
Description:
RECTIFIER UFR,FRR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):500 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1.5 V @ 9 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):150 ns
Current - Reverse Leakage @ Vr:1 µA @ 500 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:B, Axial
Supplier Device Package:- 
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$10.75
6

Please send RFQ , we will respond immediately.

Similar Products

Part Number JANTXV1N5419/TR JANTXV1N5619/TR   JANTXV1N5415/TR   JANTXV1N5416/TR   JANTXV1N5417/TR   JANTXV1N5418/TR  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 500 V 600 V 50 V 100 V 200 V 400 V
Current - Average Rectified (Io) 3A 1A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 9 A 1.6 V @ 3 A 1.5 V @ 9 A 1.5 V @ 9 A 1.5 V @ 9 A 1.5 V @ 9 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 150 ns 250 ns 150 ns 150 ns 150 ns 150 ns
Current - Reverse Leakage @ Vr 1 µA @ 500 V 500 nA @ 600 V 1 µA @ 50 V 1 µA @ 100 V 1 µA @ 200 V 1 µA @ 400 V
Capacitance @ Vr, F - 25pF @ 12V, 1MHz - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case B, Axial A, Axial B, Axial B, Axial B, Axial B, Axial
Supplier Device Package - - - - - -
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

SX34_R1_00001
SX34_R1_00001
Panjit International Inc.
SMA, SKY
PMEG45T20EXDX
PMEG45T20EXDX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
1SS81RE-E
1SS81RE-E
Renesas Electronics America Inc
RECTIFIER DIODE, 0.2A
FSV12120V
FSV12120V
onsemi
DIODE SCHOTTKY 120V 12A TO277-3
RGL34K-E3/83
RGL34K-E3/83
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 500MA DO213
IDH03G65C5XKSA2
IDH03G65C5XKSA2
Infineon Technologies
DIODE SCHOTTKY 650V 3A TO220-2-1
CGRC304-G
CGRC304-G
Comchip Technology
DIODE GEN PURP 400V 3A DO214AB
IDP30E60XKSA1
IDP30E60XKSA1
Infineon Technologies
DIODE GEN PURP 600V 52.3A TO220
120SPC045A
120SPC045A
SMC Diode Solutions
DIODE SCHOTTKY 45V 120A SPD-3A
JANS1N6638U/TR
JANS1N6638U/TR
Microchip Technology
SIGNAL/COMPUTER DIODE
ES3GC
ES3GC
MDD
DIODE GEN PURP 400V 3A SMC
S1DRX
S1DRX
Nexperia USA Inc.
RECTIFIER PN 200V 1A SOD123W

Related Product By Brand

MASMBJSAC26
MASMBJSAC26
Microchip Technology
TVS DIODE 26VWM 42.3VC SMBJ
JANTXV1N6106AUS
JANTXV1N6106AUS
Microchip Technology
TVS DIODE 7.6VWM 14.5VC SQ-MELF
MXLSMCJ33AE3
MXLSMCJ33AE3
Microchip Technology
TVS DIODE 33VWM 53.3VC DO214AB
MXLSMLJ70A
MXLSMLJ70A
Microchip Technology
TVS DIODE 70VWM 113VC DO214AB
DSC6003CI1A-033.0000T
DSC6003CI1A-033.0000T
Microchip Technology
MEMS OSC XO 33.0000MHZ CMOS SMD
ATSTK502
ATSTK502
Microchip Technology
MOD EXPANSION AVR STARTER 500
JANTX1N4135UR-1/TR
JANTX1N4135UR-1/TR
Microchip Technology
VOLTAGE REGULATOR
APT8020JLL
APT8020JLL
Microchip Technology
MOSFET N-CH 800V 33A ISOTOP
PL500-17TI-R
PL500-17TI-R
Microchip Technology
IC VCXO 36MHZ 6SOT23
25LC256-I/SM
25LC256-I/SM
Microchip Technology
IC EEPROM 256KBIT SPI 8SOIJ
AT24C08N-10SC-1.8
AT24C08N-10SC-1.8
Microchip Technology
IC EEPROM 8KBIT I2C 400KHZ 8SOIC
SY88952LMI
SY88952LMI
Microchip Technology
IC LASER DRVR 2.7GBPS 3.6V 32MLF