JANTX1N6627
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Microchip Technology JANTX1N6627

Manufacturer No:
JANTX1N6627
Manufacturer:
Microchip Technology
Package:
Bulk
Datasheet:
JANTX1N6627 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 440V 1.75A AXIAL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):440 V
Current - Average Rectified (Io):1.75A
Voltage - Forward (Vf) (Max) @ If:1.35 V @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:2 µA @ 440 V
Capacitance @ Vr, F:40pF @ 10V, 1MHz
Mounting Type:Through Hole
Package / Case:E, Axial
Supplier Device Package:- 
Operating Temperature - Junction:-65°C ~ 150°C
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Similar Products

Part Number JANTX1N6627 JANTX1N6629   JANTX1N6620   JANTX1N6622   JANTX1N6625  
Manufacturer Microchip Technology Microsemi Corporation Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 440 V 880 V 220 V 660 V 1100 V
Current - Average Rectified (Io) 1.75A 1.4A 2A 2A 1A
Voltage - Forward (Vf) (Max) @ If 1.35 V @ 2 A 1.4 V @ 1.4 A 1.4 V @ 1.2 A 1.4 V @ 1.2 A 1.75 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 50 ns 30 ns 30 ns 60 ns
Current - Reverse Leakage @ Vr 2 µA @ 440 V 2 µA @ 880 V 500 nA @ 220 V 500 nA @ 660 V 500 nA @ 1100 V
Capacitance @ Vr, F 40pF @ 10V, 1MHz 40pF @ 10V, 1MHz 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case E, Axial E, Axial A, Axial A, Axial A, Axial
Supplier Device Package - - Axial - -
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

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