JANTX1N6623/TR
  • Share:

Microchip Technology JANTX1N6623/TR

Manufacturer No:
JANTX1N6623/TR
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Datasheet:
JANTX1N6623/TR Datasheet
ECAD Model:
-
Description:
RECTIFIER UFR,FRR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):880 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.55 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:500 nA @ 880 V
Capacitance @ Vr, F:10pF @ 10V, 1MHz
Mounting Type:Through Hole
Package / Case:A, Axial
Supplier Device Package:- 
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$14.44
63

Please send RFQ , we will respond immediately.

Similar Products

Part Number JANTX1N6623/TR JANTX1N6626/TR   JANTX1N6627/TR   JANTX1N6624/TR   JANTX1N6628/TR   JANTX1N6625/TR   JANTX1N6663/TR   JANTX1N5623/TR   JANTX1N6620/TR   JANTX1N6621/TR   JANTX1N6622/TR  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 880 V 220 V 440 V 990 V 660 V 1.1 V 600 V 1000 V 220 V 440 V 660 V
Current - Average Rectified (Io) 1A 1.75A 1.75A 1A 1.75A 1A 500mA 1A 2A 2A 2A
Voltage - Forward (Vf) (Max) @ If 1.55 V @ 1 A 1.35 V @ 2 A 1.35 V @ 2 A 1.55 V @ 1 A 1.35 V @ 2 A 1.75 V @ 1 A 1 V @ 400 mA 1.6 V @ 3 A 1.4 V @ 1.2 A 1.4 V @ 1.2 A 1.4 V @ 1.2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 30 ns 30 ns 50 ns 30 ns 60 ns - 500 ns 30 ns 30 ns 30 ns
Current - Reverse Leakage @ Vr 500 nA @ 880 V 2 µA @ 220 V 2 µA @ 440 V 500 nA @ 990 V 2 µA @ 660 V 500 nA @ 1.1 V 50 nA @ 600 V 500 nA @ 1 V 500 nA @ 220 V 500 nA @ 440 V 500 nA @ 660 V
Capacitance @ Vr, F 10pF @ 10V, 1MHz 40pF @ 10V, 1MHz 40pF @ 10V, 1MHz 10pF @ 10V, 1MHz 40pF @ 10V, 1MHz 10pF @ 10V, 1MHz - 15pF @ 12V, 1MHz 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case A, Axial E, Axial E, Axial A, Axial E, Axial A, Axial DO-204AH, DO-35, Axial A, Axial A, Axial A, Axial A, Axial
Supplier Device Package - - - - - - DO-35 - Axial - -
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

EGP20D
EGP20D
onsemi
DIODE GEN PURP 200V 2A DO15
RS2J-13-F
RS2J-13-F
Diodes Incorporated
DIODE GEN PURP 600V 1.5A SMB
MUH1PD-M3/89A
MUH1PD-M3/89A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A MICROSMP
PMEG60T30ELRX
PMEG60T30ELRX
Nexperia USA Inc.
PMEG60T30ELR/SOD123/SOD2
STTH810FP
STTH810FP
STMicroelectronics
DIODE GEN PURP 1KV 8A TO220FP
PG102R_R2_00001
PG102R_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION FAST R
VS-12EWH06FNTRL-M3
VS-12EWH06FNTRL-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE 600V 12A DPAK
JANTXV1N5420
JANTXV1N5420
Microchip Technology
DIODE GEN PURP 600V 3A AXIAL
SS5P9-E3/86A
SS5P9-E3/86A
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 90V 5A TO277A
SS36LHRHG
SS36LHRHG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 3A SUB SMA
HS1GL MTG
HS1GL MTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SUB SMA
GF1G-9HE3_A/H
GF1G-9HE3_A/H
Vishay General Semiconductor - Diodes Division
DIODE GENERAL PURPOSE

Related Product By Brand

MSMCG78CAE3
MSMCG78CAE3
Microchip Technology
TVS DIODE 78VWM 126VC SMCG
DSC1033CI2-037.1250
DSC1033CI2-037.1250
Microchip Technology
MEMS OSC XO 37.1250MHZ CMOS SMD
DSC1001DC5-049.1520T
DSC1001DC5-049.1520T
Microchip Technology
MEMS OSC XO 49.1520MHZ CMOS SMD
ATMEGA256RFR2-XPRO
ATMEGA256RFR2-XPRO
Microchip Technology
XPLAINED PRO EVAL KIT
CDLL5543
CDLL5543
Microchip Technology
DIODE ZENER 25V 500MW DO213AB
AT89C51AC3-RDTUM
AT89C51AC3-RDTUM
Microchip Technology
IC MCU 8BIT 64KB FLASH 64LQFP
ATXMEGA16E5-MN
ATXMEGA16E5-MN
Microchip Technology
IC MCU 8/16BIT 16KB FLASH 32VQFN
TS80C32X2-MIA
TS80C32X2-MIA
Microchip Technology
IC MCU 8BIT ROMLESS 40PDIL
RE46C143S16TF
RE46C143S16TF
Microchip Technology
IC SMOKE DETECTOR CMOS 16-SOIC
SY88403BLMG
SY88403BLMG
Microchip Technology
IC LIMIT AMP 16MLF
MIC5014BM-TR
MIC5014BM-TR
Microchip Technology
IC GATE DRVR HI/LOW SIDE 8SOIC
MIC2214-FMBML-TR
MIC2214-FMBML-TR
Microchip Technology
IC REG LINEAR 1.5V/2.8V 10MLF