JANTX1N5621US
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Microchip Technology JANTX1N5621US

Manufacturer No:
JANTX1N5621US
Manufacturer:
Microchip Technology
Package:
Bulk
Datasheet:
JANTX1N5621US Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 800V 1A D5A
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):800 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.6 V @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):150 ns
Current - Reverse Leakage @ Vr:500 nA @ 800 V
Capacitance @ Vr, F:20pF @ 12V, 1MHz
Mounting Type:Surface Mount
Package / Case:SQ-MELF, A
Supplier Device Package:D-5A
Operating Temperature - Junction:-65°C ~ 175°C
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Similar Products

Part Number JANTX1N5621US JANTX1N5623US   JANTX1N5622US   JANTX1N6621US   JANTX1N5620US  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 800 V 1000 V 1000 V 440 V 800 V
Current - Average Rectified (Io) 1A 1A 1A 2A 1A
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 3 A 1.6 V @ 3 A 1.3 V @ 3 A 1.4 V @ 1.2 A 1.3 V @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 150 ns 500 ns 2 µs 30 ns 2 µs
Current - Reverse Leakage @ Vr 500 nA @ 800 V 500 nA @ 1000 V 500 nA @ 1000 V 500 nA @ 440 V 500 nA @ 800 V
Capacitance @ Vr, F 20pF @ 12V, 1MHz 15pF @ 12V, 1MHz - 10pF @ 10V, 1MHz -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A
Supplier Device Package D-5A D-5A D-5A D-5A D-5A
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 200°C -65°C ~ 150°C -65°C ~ 175°C

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