JANTX1N5617US
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Microchip Technology JANTX1N5617US

Manufacturer No:
JANTX1N5617US
Manufacturer:
Microchip Technology
Package:
Bulk
Datasheet:
JANTX1N5617US Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 400V 1A D5A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.6 V @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):150 ns
Current - Reverse Leakage @ Vr:500 µA @ 400 V
Capacitance @ Vr, F:35pF @ 12V, 1MHz
Mounting Type:Surface Mount
Package / Case:SQ-MELF, A
Supplier Device Package:D-5A
Operating Temperature - Junction:-65°C ~ 175°C
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Similar Products

Part Number JANTX1N5617US JANTX1N5618US   JANTX1N5619US   JANTX1N5614US   JANTX1N5616US  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 600 V 600 V 200 V 400 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 3 A 1.3 V @ 3 A 1.6 V @ 3 A 1.3 V @ 3 A 1.3 V @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 150 ns 2 µs 250 ns 2 µs 2 µs
Current - Reverse Leakage @ Vr 500 µA @ 400 V 500 nA @ 600 V 500 nA @ 600 V 500 nA @ 200 V 500 nA @ 400 V
Capacitance @ Vr, F 35pF @ 12V, 1MHz - 25pF @ 12V, 1MHz - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A
Supplier Device Package D-5A D-5A D-5A D-5A D-5A
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 200°C -65°C ~ 175°C -65°C ~ 200°C -65°C ~ 200°C

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