JANTX1N5614US
  • Share:

Microchip Technology JANTX1N5614US

Manufacturer No:
JANTX1N5614US
Manufacturer:
Microchip Technology
Package:
Bulk
Datasheet:
JANTX1N5614US Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 200V 1A D5A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.3 V @ 3 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:500 nA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:SQ-MELF, A
Supplier Device Package:D-5A
Operating Temperature - Junction:-65°C ~ 200°C
0 Remaining View Similar

In Stock

$8.72
95

Please send RFQ , we will respond immediately.

Similar Products

Part Number JANTX1N5614US JANTX1N5616US   JANTX1N5617US   JANTX1N5618US   JANTX1N5619US  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 400 V 400 V 600 V 600 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 3 A 1.3 V @ 3 A 1.6 V @ 3 A 1.3 V @ 3 A 1.6 V @ 3 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 150 ns 2 µs 250 ns
Current - Reverse Leakage @ Vr 500 nA @ 200 V 500 nA @ 400 V 500 µA @ 400 V 500 nA @ 600 V 500 nA @ 600 V
Capacitance @ Vr, F - - 35pF @ 12V, 1MHz - 25pF @ 12V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A
Supplier Device Package D-5A D-5A D-5A D-5A D-5A
Operating Temperature - Junction -65°C ~ 200°C -65°C ~ 200°C -65°C ~ 175°C -65°C ~ 200°C -65°C ~ 175°C

Related Product By Categories

SMMSD914T1G
SMMSD914T1G
onsemi
DIODE GEN PURP 100V 200MA SOD123
CMR1U-04M TR13 PBFREE
CMR1U-04M TR13 PBFREE
Central Semiconductor Corp
DIODE GEN PURP 400V 1A SMA
MRA4005T3G
MRA4005T3G
onsemi
DIODE GEN PURP 600V 1A SMA
SD175SC200A.T
SD175SC200A.T
SMC Diode Solutions
DIODE SCHOTTKY 200V 30A DIE
NRVUA220VT3G
NRVUA220VT3G
onsemi
DIODE GEN PURP 200V 2A SMA
JANS1N5617US
JANS1N5617US
Microchip Technology
DIODE GEN PURP 400V 1A D5A
8EWF02STRL
8EWF02STRL
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A DPAK
SK154-TP
SK154-TP
Micro Commercial Co
DIODE SCHOTTKY 40V 15A DO214AB
2A04-T
2A04-T
Diodes Incorporated
DIODE GEN PURP 400V 2A DO15
BYW27-400GPHE3/73
BYW27-400GPHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
SF41GHR0G
SF41GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 4A DO201AD
SFAF502G C0G
SFAF502G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 5A ITO220AC

Related Product By Brand

MA15KP260AE3
MA15KP260AE3
Microchip Technology
TVS DIODE 260VWM 419VC DO204AR
MXP4KE20CAE3
MXP4KE20CAE3
Microchip Technology
TVS DIODE 17.1VWM 27.7VC DO204AL
DSC6021JI2A-009VT
DSC6021JI2A-009VT
Microchip Technology
MEMS OSC (FS) ULTRA LOW POWER LV
JANTX2N3499U4/TR
JANTX2N3499U4/TR
Microchip Technology
TRANS NPN 100V 0.5A U4
ATSAMV71N19B-AAB
ATSAMV71N19B-AAB
Microchip Technology
IC MCU 32BIT 512KB FLASH 100LQFP
PIC16C54C-04E/P
PIC16C54C-04E/P
Microchip Technology
IC MCU 8BIT 768B OTP 18DIP
M2S050-1FGG896
M2S050-1FGG896
Microchip Technology
IC SOC CORTEX-M3 166MHZ 896FBGA
HT18LG-G
HT18LG-G
Microchip Technology
IC TELECOM INTERFACE 8SOIC
SY100S314FC
SY100S314FC
Microchip Technology
IC LINE RCVR QUINT DIFF 24CERPAK
AT27C512R-45JC
AT27C512R-45JC
Microchip Technology
IC EPROM 512KBIT PARALLEL 32PLCC
MCP14A0154-E/SN
MCP14A0154-E/SN
Microchip Technology
IC GATE DRVR LOW-SIDE 8SOIC
ATWILC1000B-UU-T
ATWILC1000B-UU-T
Microchip Technology
IC RF TXRX+MCU WIFI 55UFBGA