JANTX1N5418US/TR
  • Share:

Microchip Technology JANTX1N5418US/TR

Manufacturer No:
JANTX1N5418US/TR
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Datasheet:
JANTX1N5418US/TR Datasheet
ECAD Model:
-
Description:
RECTIFIER UFR,FRR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1.5 V @ 9 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):150 ns
Current - Reverse Leakage @ Vr:2 µA @ 400 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:SQ-MELF, B
Supplier Device Package:D-5B
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$10.68
65

Please send RFQ , we will respond immediately.

Similar Products

Part Number JANTX1N5418US/TR JANTX1N5618US/TR   JANTX1N5416US/TR   JANTX1N5417US/TR  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 600 V 100 V 200 V
Current - Average Rectified (Io) 3A 1A 3A 3A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 9 A 1.3 V @ 3 A 1.5 V @ 9 A 1.5 V @ 9 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 150 ns 2 µs 150 ns 150 ns
Current - Reverse Leakage @ Vr 2 µA @ 400 V 500 nA @ 600 V 1 µA @ 100 V 1 µA @ 200 V
Capacitance @ Vr, F - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SQ-MELF, B SQ-MELF, A SQ-MELF, B SQ-MELF, B
Supplier Device Package D-5B D-5A D-5B D-5B
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 200°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

FR104G A0G
FR104G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
HS1KFS
HS1KFS
Taiwan Semiconductor Corporation
75NS, 1A, 800V, HIGH EFFICIENT R
S1D-CT
S1D-CT
Diotec Semiconductor
CUT-TAPE VERSION. STANDARD RECO
FSV12120V
FSV12120V
onsemi
DIODE SCHOTTKY 120V 12A TO277-3
BAS85-GS18
BAS85-GS18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD80
BAS101,215
BAS101,215
Nexperia USA Inc.
DIODE GP 300V 200MA TO236AB
MBRB1060-E3/45
MBRB1060-E3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 10A TO263AB
TSPB5H120S S1G
TSPB5H120S S1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 120V 5A SMPC4.0
VS-12FL10S05
VS-12FL10S05
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 12A DO203AA
VS-71HF140
VS-71HF140
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.4KV 70A DO203AB
S12KCHR7G
S12KCHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 12A DO214AB
SS210LHMQG
SS210LHMQG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 2A SUB SMA

Related Product By Brand

SMLJ75AE3/TR13
SMLJ75AE3/TR13
Microchip Technology
TVS DIODE 75VWM 121VC DO214AB
MXLP4KE75AE3
MXLP4KE75AE3
Microchip Technology
TVS DIODE 64.1VWM 103VC DO204AL
DSC1001CI2-007.3728
DSC1001CI2-007.3728
Microchip Technology
MEMS OSC XO 7.3728MHZ CMOS SMD
DSC1121AE2-004.9152
DSC1121AE2-004.9152
Microchip Technology
MEMS OSC 4.9152MHZ LVCMOS 25PPM
CDLL5250B
CDLL5250B
Microchip Technology
DIODE ZENER 20V 10MW DO213AB
MCP4642T-104E/UN
MCP4642T-104E/UN
Microchip Technology
IC DGT POT 100KOHM 129TAP 10MSOP
A40MX02-PQ100
A40MX02-PQ100
Microchip Technology
IC FPGA 57 I/O 100QFP
PIC32MX120F032D-I/PT
PIC32MX120F032D-I/PT
Microchip Technology
IC MCU 32BIT 32KB FLASH 44TQFP
ATSAM4S16CA-CU
ATSAM4S16CA-CU
Microchip Technology
IC MCU 32BIT 1MB FLASH 100TFBGA
SST25VF016B-75-4I-QAF-T
SST25VF016B-75-4I-QAF-T
Microchip Technology
IC FLASH 16MBIT SPI 80MHZ 8WSON
MIC809TU TR
MIC809TU TR
Microchip Technology
MICROPROCESSOR RESET CIRCUIT
EMC1046-1-AIZL-TR
EMC1046-1-AIZL-TR
Microchip Technology
SENSOR DIGITAL -40C-125C 10TSSOP