Microchip Technology-JANSR2N2219A - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	JANSR2N2219A	JANSR2N2219AL	JANSR2N2218A	JANSR2N2219
Manufacturer	Microchip Technology	Microchip Technology	Microchip Technology	Microchip Technology
Product Status	Active	Active	Active	Active
Transistor Type	NPN	NPN	NPN	NPN
Current - Collector (Ic) (Max)	800 mA	800 mA	800 mA	800 mA
Voltage - Collector Emitter Breakdown (Max)	50 V	50 V	50 V	50 V
Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA	1V @ 50mA, 500mA	1V @ 50mA, 500mA	1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)	10nA	10nA	10nA	10nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V	75 @ 1mA, 10V	40 @ 150mA, 10V	100 @ 150mA, 10V
Power - Max	800 W	800 mW	800 W	800 mW
Frequency - Transition	-	-	-	-
Operating Temperature	-55°C ~ 200°C (TJ)	-65°C ~ 200°C (TJ)	-65°C ~ 200°C (TJ)	-55°C ~ 200°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-205AD, TO-39-3 Metal Can	TO-205AA, TO-5-3 Metal Can	TO-205AD, TO-39-3 Metal Can	TO-205AD, TO-39-3 Metal Can
Supplier Device Package	TO-39 (TO-205AD)	TO-5	TO-39 (TO-205AD)	TO-39 (TO-205AD)

Transistor Type:	NPN
Current - Collector (Ic) (Max):	800 mA
Voltage - Collector Emitter Breakdown (Max):	50 V
Vce Saturation (Max) @ Ib, Ic:	1V @ 50mA, 500mA
Current - Collector Cutoff (Max):	10nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 10V
Power - Max:	800 W
Frequency - Transition:	-
Operating Temperature:	-55°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-205AD, TO-39-3 Metal Can
Supplier Device Package:	TO-39 (TO-205AD)

Microchip Technology JANSR2N2219A