Microchip Technology-JANSP2N2222AL - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	JANSP2N2222AL	JANSF2N2222AL	JANSH2N2222AL	JANSL2N2222AL
Manufacturer	Microchip Technology	Microchip Technology	Microchip Technology	Microchip Technology
Product Status	Active	Active	Active	Active
Transistor Type	NPN	NPN	NPN	NPN
Current - Collector (Ic) (Max)	800 mA	800 mA	800 mA	800 mA
Voltage - Collector Emitter Breakdown (Max)	50 V	50 V	50 V	50 V
Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA	1V @ 50mA, 500mA	1V @ 50mA, 500mA	1V @ 50mA, 500mA
Current - Collector Cutoff (Max)	50nA	50nA	50nA	50nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V	100 @ 150mA, 10V	100 @ 150mA, 10V	100 @ 150mA, 10V
Power - Max	500 mW	500 mW	500 mW	500 mW
Frequency - Transition	-	-	-	-
Operating Temperature	-65°C ~ 200°C (TJ)	-65°C ~ 200°C (TJ)	-65°C ~ 200°C (TJ)	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-206AA, TO-18-3 Metal Can	TO-206AA, TO-18-3 Metal Can	TO-206AA, TO-18-3 Metal Can	TO-206AA, TO-18-3 Metal Can
Supplier Device Package	TO-18 (TO-206AA)	TO-18 (TO-206AA)	TO-18 (TO-206AA)	TO-18 (TO-206AA)

Transistor Type:	NPN
Current - Collector (Ic) (Max):	800 mA
Voltage - Collector Emitter Breakdown (Max):	50 V
Vce Saturation (Max) @ Ib, Ic:	1V @ 50mA, 500mA
Current - Collector Cutoff (Max):	50nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 10V
Power - Max:	500 mW
Frequency - Transition:	-
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-206AA, TO-18-3 Metal Can
Supplier Device Package:	TO-18 (TO-206AA)

Microchip Technology JANSP2N2222AL