Microchip Technology-JANSD2N2907A - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	JANSD2N2907A	JANSR2N2907A	JANSF2N2907A	JANS2N2907A
Manufacturer	Microchip Technology	Microchip Technology	Microchip Technology	Microchip Technology
Product Status	Active	Active	Active	Active
Transistor Type	PNP	PNP	PNP	PNP
Current - Collector (Ic) (Max)	600 mA	600 mA	600 mA	600 mA
Voltage - Collector Emitter Breakdown (Max)	60 V	60 V	60 V	60 V
Vce Saturation (Max) @ Ib, Ic	1.6V @ 50mA, 500mA	1.6V @ 50mA, 500mA	1.6V @ 50mA, 500mA	1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)	50nA	50nA	50nA	50nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V	100 @ 150mA, 10V	100 @ 150mA, 10V	100 @ 150mA, 10V
Power - Max	500 mW	500 mW	500 mW	500 mW
Frequency - Transition	-	-	-	-
Operating Temperature	-65°C ~ 200°C (TJ)	-65°C ~ 200°C (TJ)	-65°C ~ 200°C (TJ)	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-206AA, TO-18-3 Metal Can	TO-206AA, TO-18-3 Metal Can	TO-206AA, TO-18-3 Metal Can	TO-206AA, TO-18-3 Metal Can
Supplier Device Package	TO-18 (TO-206AA)	TO-18 (TO-206AA)	TO-18 (TO-206AA)	TO-206AA (TO-18)

Transistor Type:	PNP
Current - Collector (Ic) (Max):	600 mA
Voltage - Collector Emitter Breakdown (Max):	60 V
Vce Saturation (Max) @ Ib, Ic:	1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max):	50nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 10V
Power - Max:	500 mW
Frequency - Transition:	-
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-206AA, TO-18-3 Metal Can
Supplier Device Package:	TO-18 (TO-206AA)

Microchip Technology JANSD2N2907A