Microchip Technology-JANS2N3637L - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	JANS2N3637L	JANS2N3634L	JANS2N3635L	JANS2N3636L	JANS2N3637
Manufacturer	Microchip Technology	Microchip Technology	Microchip Technology	Microchip Technology	Microchip Technology
Product Status	Active	Active	Active	Active	Active
Transistor Type	PNP	PNP	PNP	PNP	PNP
Current - Collector (Ic) (Max)	1 A	10 µA	10 µA	10 µA	1 A
Voltage - Collector Emitter Breakdown (Max)	175 V	140 V	140 V	175 V	175 V
Vce Saturation (Max) @ Ib, Ic	600mV @ 5mA, 50mA	600mV @ 5mA, 50mA	600mV @ 5mA, 50mA	600mV @ 5mA, 50mA	600mV @ 5mA, 50mA
Current - Collector Cutoff (Max)	10µA (ICBO)	10µA	10µA	10µA	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 10V	50 @ 50mA, 10V	100 @ 50mA, 10V	50 @ 50mA, 10V	100 @ 50mA, 10V
Power - Max	1 W	1 W	1 W	1 W	1 W
Frequency - Transition	-	-	-	-	-
Operating Temperature	-65°C ~ 200°C (TJ)	-65°C ~ 200°C (TJ)	-65°C ~ 200°C (TJ)	-65°C ~ 200°C (TJ)	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-205AA, TO-5-3 Metal Can	TO-205AA, TO-5-3 Metal Can	TO-205AA, TO-5-3 Metal Can	TO-205AA, TO-5-3 Metal Can	TO-205AD, TO-39-3 Metal Can
Supplier Device Package	TO-5	TO-5	TO-5	TO-5	TO-39

Transistor Type:	PNP
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	175 V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 10V
Power - Max:	1 W
Frequency - Transition:	-
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-205AA, TO-5-3 Metal Can
Supplier Device Package:	TO-5

Microchip Technology JANS2N3637L