JANS1N5806US/TR
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Microchip Technology JANS1N5806US/TR

Manufacturer No:
JANS1N5806US/TR
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Datasheet:
JANS1N5806US/TR Datasheet
ECAD Model:
-
Description:
RECTIFIER UFR,FRR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):150 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:1 µA @ 150 V
Capacitance @ Vr, F:25pF @ 10V, 1MHz
Mounting Type:Surface Mount
Package / Case:SQ-MELF, A
Supplier Device Package:D-5A
Operating Temperature - Junction:-65°C ~ 175°C
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In Stock

$17.95
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Similar Products

Part Number JANS1N5806US/TR JANS1N5809US/TR   JANS1N5807US/TR   JANS1N5802US/TR   JANS1N5804US/TR  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 150 V 100 V 50 V 50 V 100 V
Current - Average Rectified (Io) 1A 3A 3A 1A 1A
Voltage - Forward (Vf) (Max) @ If 875 mV @ 1 A 875 mV @ 4 A 875 mV @ 4 A 975 mV @ 2.5 A 975 mV @ 2.5 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns 30 ns 30 ns 25 ns 25 ns
Current - Reverse Leakage @ Vr 1 µA @ 150 V - - - 1 µA @ 150 V
Capacitance @ Vr, F 25pF @ 10V, 1MHz - - 25pF @ 10V, 1MHz 25pF @ 10V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Through Hole Through Hole
Package / Case SQ-MELF, A SQ-MELF, B SQ-MELF, B A, Axial A, Axial
Supplier Device Package D-5A B, SQ-MELF B, SQ-MELF A, Axial A, Axial
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

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