Microchip Technology-JANKCB2N3700 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	JANKCB2N3700	JANKCBR2N3700	JANKCBF2N3700	JANHCB2N3700
Manufacturer	Microchip Technology	Microchip Technology	Microchip Technology	Microchip Technology
Product Status	Active	Active	Active	Active
Transistor Type	NPN	NPN	NPN	NPN
Current - Collector (Ic) (Max)	1 A	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	80 V	80 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	10nA	10nA	10nA	10nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V	100 @ 150mA, 10V	100 @ 150mA, 10V	100 @ 150mA, 10V
Power - Max	500 mW	500 mW	500 mW	500 mW
Frequency - Transition	-	-	-	-
Operating Temperature	-65°C ~ 200°C (TJ)	-65°C ~ 200°C (TJ)	-65°C ~ 200°C (TJ)	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-206AA, TO-18-3 Metal Can	TO-206AA, TO-18-3 Metal Can	TO-206AA, TO-18-3 Metal Can	TO-206AA, TO-18-3 Metal Can
Supplier Device Package	TO-18 (TO-206AA)	TO-18 (TO-206AA)	TO-18 (TO-206AA)	TO-18 (TO-206AA)

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	10nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 10V
Power - Max:	500 mW
Frequency - Transition:	-
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-206AA, TO-18-3 Metal Can
Supplier Device Package:	TO-18 (TO-206AA)

Microchip Technology JANKCB2N3700