Microchip Technology-JAN2N918 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	50 mA
Voltage - Collector Emitter Breakdown (Max):	15 V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 3mA, 1V
Power - Max:	200 mW
Frequency - Transition:	-
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-72-3 Metal Can
Supplier Device Package:	TO-72

Microchip Technology JAN2N918